2SK2985 View Datasheet(PDF) - Toshiba

Part Name

Description

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2SK2985

N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba 

2SK2985

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

2SK2985

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.)

l High forward transfer admittance : |Yfs| = 70 S (typ.)

l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V)

l Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

Drain−gate voltage (RGS = 20 kΩ)

Gate−source voltage

Drain current

DC (Note 1)

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

VDSS

VDGR

VGSS

ID

IDP

PD

EAS

IAR

EAR

Tch

Tstg

60

V

60

V

±20

V

45

A

180

45

W

701

mJ

45

A

4.5

mJ

150

°C

−55~150

°C

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Rth (ch−c)

Rth (ch−a)

2.78

°C / W

62.5

°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: VDD = 25 V, Tch = 25°C (initial), L = 471 µH, IAR = 45 A, RG = 25 Ω

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device.

Please handle with caution.

1

2002-07-31

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