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2SK3029 View Datasheet(PDF) - Panasonic Corporation

Part NameDescriptionManufacturer
2SK3029 Silicon N-Channel Power F-MOS FET Panasonic
Panasonic Corporation Panasonic
2SK3029 Datasheet PDF : 1 Pages
1
Power F-MOS FETs
2SK3029 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
q High electrostatic breakdown voltage
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage VDSS
100
V
Gate to Source voltage
VGSS
±20
V
Drain current
DC
ID
Pulse
IDP
±5
A
±10
A
Avalanche energy capacity
EAS*
1.25
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C PD
10
W
1
Channel temperature
Storage temperature
Tch
150
°C
Tstg
55 to +150
°C
* L = 0.1mH, IL = 5A, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance
RDS(on)1
RDS(on)2
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
Thermal resistance between channel and atmosphere Rth(ch-a)
VDS = 80V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 3A
VGS = 4V, ID = 3A
VDS = 10V, ID = 3A
IDR = 5A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDD = 30V, ID = 3A
VGS = 10V, RL = 10
6.5±0.1
5.3±0.1
4.35±0.1
unit: mm
2.3±0.1
0.5±0.1
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
1
2
3
Internal Connection
G
1: Gate
2: Drain
3: Source
U Type Package
D
S
min
typ
max
Unit
10
µA
±10
µA
100
V
1
2.5
V
0.28
0.42
m
0.33
0.5
m
2.5
4
S
1.5
V
240
pF
60
pF
25
pF
12
ns
20
ns
130
ns
330
ns
12.5 °C/W
125
°C/W
1
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