DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
3.0
ID = 7.5 A
2.0
4.0 A
1.0
0
−50
VGS = 10 V
Pulsed
0
50
100
150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
Ciss
1000
100
Coss
10
VGS = 0 V
f = 1 MHz
1
1.0
10
Crss
100
VDS - Drain to Source Voltage - V
1000
10000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/ µs
VGS = 0 V
1000
100
10
0.1
1.0
10
100
ID - Drain Current - A
2SK3116
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1.0
VGS = 10 V 0 V
0.1
Pulsed
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
td(on)
1
0.1
0.1
tr
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1
10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
ID = 7.5 A
14
600
VDD = 450 V
300 V
150 V
12
VGS
10
400
8
6
200
4
VDS
2
0
0
8
12
20
32
QG - Gate Charge - nC
4
Data Sheet D13339EJ2V0DS