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K3113 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3113
NEC
NEC => Renesas Technology NEC
K3113 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features
a low gate charge and excellent switching characteristic, and
designed for high voltage applications such as switching
power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3113
TO-251 (MP-3)
2SK3113-Z
TO-252 (MP-3Z)
FEATURES
Low on-state resistance
RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A)
Low gate charge
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
Gate voltage rating ±30 V
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±2.0
A
ID(pulse)
±8.0
A
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C) Note2
PT2
20
W
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
–55 to +150 °C
IAS
2.0
A
EAS
2.7
mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 0 V
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13336EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
1998, 2001
 

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