K2984 View Datasheet(PDF) - NEC => Renesas Technology
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K2984 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2984
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES
• Low on-resistance
RDS(on)1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A)
RDS(on)2 = 15 mΩ (MAX.) (VGS = 4.5 V, ID = 20 A)
• Low Ciss Ciss = 2850 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
2SK2984
2SK2984-S
2SK2984-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Note1
Gate to Source Voltage Note2
VDSS
VGSS
30
V
±20
V
Drain Current (DC)
Drain Current (pulse)Note3
ID(DC)
ID(pulse)
±40
A
±160
A
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Total Power Dissipation (Tc = 25°C)
PT
60
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Notes.1 VGS = 0 V
2 VDS = 0 V
3 PW ≤ 10 µ s, Duty Cycle ≤ 1 %
.
The information in this document is subject to change without notice.
Document No. D12356EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP (K)
Printed in Japan
©
1998
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