K2569 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

View to exact match

K2569

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2569

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

Pch*2

Tch

Tstg

Ratings

Unit

50

V

±20

V

0.2

A

0.4

A

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

50

Gate to source breakdown

voltage

V(BR)GSS

±20

Zero gate voltage drain current IDSS

—

Gate to source leak current IGSS

—

Gate to source cutoff voltage VGS(off)

0.5

Static drain to source on state RDS(on)1 —

resistance

Static drain to source on state RDS(on)2 —

resistance

Foward transfer admittance |yfs|

0.13

Typ

—

—

—

—

—

2.0

3.1

0.23

Max

—

—

1.0

±2.0

1.5

2.6

5.0

—

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Notes 1. Pulse Test

2. Marking is "ZN–"

14.0 —

17.2 —

1.73 —

40

—

86

—

1120 —

430 —

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

µs

µs

µs

µs

Test Conditions

ID = 100 µA, VGS = 0

IG = ±100 µA, VDS = 0

VDS = 40 V, VGS = 0

VGS = ±16 V, VDS = 0

ID = 10 µA, VDS = 5 V

ID = 100 mA

VGS = 4 V*1

ID = 40 mA

VGS = 2.5 V*1

ID = 100 mA

VDS = 10 V

VDS = 10 V

VGS = 0

f = 1 MHz

VGS = 10 V, ID = 100 mA

RL = 300 Ω

2

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