Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name
Description
K2614 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K2614
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
Toshiba
K2614 Datasheet PDF : 6 Pages
1
2
3
4
5
6
20
Common source
Tc
=
25°C
Pulse test
16
I
D
– V
DS
8
10
15
12
8
4
6
5
4
3.5
VGS = 3 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage VDS (V)
2SK2614
50
10
15
40
I
D
– V
DS
86
5
Common source
Tc
=
25°C
Pulse test
30
4.5
20
4
3.5
10
VGS = 3 V
0
0
2
4
6
8
10
Drain-source voltage VDS (V)
50
Common source
V
DS
=
10 V
40
Pulse test
I
D
– V
GS
25
30
Tc =
−
55°C
100
20
10
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
V
DS
– V
GS
2.0
Common source
Tc
=
25°C
Pulse test
1.6
1.2
ID = 25 A
0.8
12
0.4
6
0
0
4
8
12
16
20
Gate-source voltage VGS (V)
100
Common source
VDS
=
10 V
50
Pulse test
30
10
|Y
fs
| – I
D
Tc =
−
55°C
25
100
5
3
1
1
35
10
30 50
100
Drain current ID (A)
R
DS (ON)
– I
D
1
Common source
Tc
=
25°C
0.5
Pulse test
0.3
0.1
VGS = 4 V
0.05
10
0.03
0.01
1
35
10
30 50
100
Drain current ID (A)
3
2009-12-21
Share Link:
datasheetbank.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]