Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 15 A
VGS = 10 V, ID = 15 A
VDS = 10 V, ID = 15 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ 80 V, VGS = 10 V, ID = 30 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 30 A, VGS = 0 V
IDR = 30 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SK2466
Min Typ. Max Unit
—
—
±10
µA
—
—
100 µA
100
—
—
V
0.8
—
2.0
V
—
40
70
mΩ
—
34
46
13
30
—
S
— 3250 —
—
230
—
pF
—
520
—
—
33
—
—
60
—
ns
—
95
—
—
230
—
—
68
—
—
46
—
nC
—
22
—
Min Typ. Max Unit
—
—
30
A
—
—
120
A
—
— −1.7
V
—
120
—
ns
—
280
—
µC
2
2002-02-06