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K2466 View Datasheet(PDF) - Toshiba

Part Name
Description
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K2466 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 15 A
VGS = 10 V, ID = 15 A
VDS = 10 V, ID = 15 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turnon time
ton
Switching time
Fall time
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs
VDD 80 V, VGS = 10 V, ID = 30 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 30 A, VGS = 0 V
IDR = 30 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SK2466
Min Typ. Max Unit
±10
µA
100 µA
100
V
0.8
2.0
V
40
70
m
34
46
13
30
S
— 3250 —
230
pF
520
33
60
ns
95
230
68
46
nC
22
Min Typ. Max Unit
30
A
120
A
1.7
V
120
ns
280
µC
2
2002-02-06
 

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