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Part Name
Description
2SK2400 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
2SK2400
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
Toshiba
2SK2400 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK2400
Safe Operating Area
100
ID max (pulsed)
*
10
ID max (pulsed)
*
ID max (Continuous)
5
3
1 ms
*
10 ms
*
100
μ
s
*
1
0.5
DC Operation
0.3
Ta
=
25°C
0.1
*
: Single Nonrepetitive Pulse
Tc
=
25°C
0.05
Curves must be derated
0.03
linearly with increase in
temperature.
VDSS max
0.01
0.1 0.3
1
3
10
30
100 300
Drain-Source Voltage V
DS
(V)
R
G
= 25
Ω
V
DD
= 25 V, L = 11.6 mH
EAS
=
1
2
⋅
L
⋅
I
2
⋅ ⎜⎛
⎝
BVDSS
BVDSS
−
VDD
⎟⎞
⎠
5
2009-09-29
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