K2414-Z View Datasheet(PDF) - NEC => Renesas Technology
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K2414-Z Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2414, 2SK2414-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 840 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse)*
ID(pulse)
±40
A
Total Power Dissipation (Tc = 25 ˚C) PT1
20
W
Total Power Dissipation (TA = 25 ˚C) PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
Single Avalanche Current**
IAS
10
A
Single Avalanche Energy**
EAS
10
mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
1 23
1.3 MAX.
0.6 ±0.1
2.3 2.3
0.6 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-3
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
12 3
1.3 MAX.
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-3Z (SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13193EJ2V0DS00 (2nd edition)
(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994
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