K2133 View Datasheet(PDF) - KEXIN Industrial

Part Name

Description

View to exact match

K2133

MOS Field Effect Power Transistor

KEXIN Industrial 

SMD Type

MOSFICET

MOS Field Effect Power Transistor

2SK2133

Features

Low on-resistance

RDS(on)=0.21 MAX.@VGS=10V,ID=8.0A

Low Ciss Ciss=1090 pF TYP.

High avalanche capabil

TO-263

+0.2

4.57 +0.1

-0.2

1.27-0.1

Unit: mm

1.27+0.1

-0.1

0.1max

+0.2

2.54-0.2

+0.1

5.08-0.1

0.81+0.1

-0.1

2.54

0.4+0.2

-0.2

1 Gate

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Power dissipation TA=25

TC=25

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate to source cutoff voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol

Rating

Unit

VDSS

250

V

VGSS

30

V

ID

16

A

Idp *

64

A

1.5

W

PD

75

W

Tch

150

Tstg

-55 to +150

Symbol

Testconditons

IDSS VDS=250V,VGS=0

IGSS VGS= 30V,VDS=0

VGS(off) VDS=10V,ID=1mA

Yfs VDS=10V,ID=8.0A

RDS(on) VGS=10V,ID=8.0A

Ciss

Coss VDS=10V,VGS=0,f=1MHZ

Crss

td(on)

tr

td(off)

ID=8.0A,VGS(on)=10V,RL=18.75

,RG=10 ,VDD=150V

tf

Min Typ Max Unit

100

A

10

A

2.0

4.0 V

4.0

S

0.2 0.26

1090

pF

420

pF

80

pF

20

ns

40

ns

60

ns

20

ns

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