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K2212 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
K2212
Hitachi
Hitachi -> Renesas Electronics Hitachi
K2212 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SK2212
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
200
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
2.0
Static drain to source on state RDS(on)
resistance
Forward transfer admittance |yfs|
3.5
Input capacitance
Ciss
Output capacitance
Coss —
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note 1. Pulse Test
Typ Max Unit
V
V
±10 µA
250 µA
4.0 V
0.24 0.3
6
S
1000 —
pF
360 —
pF
65
pF
18
ns
80
ns
65
ns
50
ns
1.1
V
190 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 160 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A
VGS = 10 V*1
ID = 5 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 5 A
VGS = 10 V
RL = 6
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF / dt = 100 A / µs
3
 

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