2SK2212
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
200
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
—
Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage VGS(off)
2.0
Static drain to source on state RDS(on)
—
resistance
Forward transfer admittance |yfs|
3.5
Input capacitance
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note 1. Pulse Test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
250 µA
—
4.0 V
0.24 0.3 Ω
6
—
S
1000 —
pF
360 —
pF
65
—
pF
18
—
ns
80
—
ns
65
—
ns
50
—
ns
1.1
—
V
190 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 160 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A
VGS = 10 V*1
ID = 5 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 5 A
VGS = 10 V
RL = 6 Ω
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF / dt = 100 A / µs
3