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K2084 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K2084 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K2084 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SK2084(L), 2SK2084(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
20
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
1.0
Static drain to source on state RDS(on)
resistance
Forward transfer admittance |yfs|
5
Input capacitance
Ciss
Output capacitance
Coss —
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note 1. Pulse Test
Typ Max Unit
V
V
±10 µA
100 µA
2.5 V
0.04 0.053
0.058 0.075
9
S
800 —
pF
680 —
pF
165 —
pF
15
ns
60
ns
100 —
ns
80
ns
0.9
V
80
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 16 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A
VGS = 10 V*1
ID = 4 A
VGS = 4 V*1
ID = 4 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 4 A
VGS = 10 V
RL = 5
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0,
diF / dt = 20 A / µs
3
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