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K2229 View Datasheet(PDF) - Toshiba

Part Name
Description
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K2229 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 1.3 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Turnon time
ton
Switching time
Fall time
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs
VDD 48 V, VGS = 10 V, ID = 5 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V, dIDR/dt = 50 A/μs
Marking
2SK2229
Min Typ. Max Unit
±10
μA
— 100 μA
60
V
0.8
2.0
V
— 0.20 0.30
— 0.12 0.16
3.0 5.0
S
— 370 —
60
pF
— 180 —
18
25
ns
55
— 170 —
12
8
nC
4
Min Typ. Max Unit
5
A
20
A
1.7
V
70
ns
0.1
μC
K2229
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17
 

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