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K2035 Просмотр технического описания (PDF) - Toshiba

Номер в каталогеКомпоненты Описаниепроизводитель
K2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Toshiba
Toshiba Toshiba
K2035 Datasheet PDF : 5 Pages
1 2 3 4 5
2SK2035
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = 10 V, VDS = 0
1
μA
V (BR) DSS ID = 100 μA, VGS = 0
20
V
IDSS
VDS = 20 V, VGS = 0
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.5
1.5
V
Yfs
VDS = 3 V, ID = 10 mA
25
50
mS
RDS (ON) ID = 10 mA, VGS = 2.5 V
8
12
Ω
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
8.5
pF
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
3.3
pF
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
9.3
pF
ton
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V 0.16
μs
toff
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V 0.15
Switching Time Test Circuit
2
2007-11-01
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