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K2035 Просмотр технического описания (PDF) - Toshiba

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K2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Toshiba
Toshiba Toshiba
K2035 Datasheet PDF : 5 Pages
1 2 3 4 5
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2035
High Speed Switching Applications
Analog Switching Applications
High input impedance.
Low gate threshold voltage: Vth = 0.5~1.5 V
Excellent switching times: ton = 0.16 μs (typ.)
toff = 0.15 μs (typ.)
Small package
Enhancement-mode
Marking
Equivalent Circuit
2SK2035
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDS
VGSS
ID
PD
Tch
Tstg
20
V
10
V
100
mA
100
mW
150
°C
55~150
°C
JEDEC
JEITA
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caushon.
1
2007-11-01
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