TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
High Speed Switching Applications
Analog Switching Applications
• High input impedance.
• Low gate threshold voltage: Vth = 0.5~1.5 V
• Excellent switching times: ton = 0.16 μs (typ.)
toff = 0.15 μs (typ.)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Drain power dissipation
Storage temperature range
Weight: 2.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caushon.