Power F-MOS FETs
Ciss, Coss, Crss VDS
10000
f=1MHz
TC=25˚C
1000
Ciss
100
Coss
Crss
10
1000
800
VDS, VGS Qg
ID=3A
20
TC=25˚C
16
600
12
400 VDS
8
VGS
200
4
1
0
50 100 150 200 250
Drain to source voltage VDS (V)
0
0
0
10 20 30 40 50
Gate charge amount Qg (nC)
2SK2130
td(on), tr, tf, td(off) ID
250
VDD=200V
VGS=10V
TC=25˚C
200
150
100
50
td(off)
tf
tr
td(on)
0
0
1
2
3
4
5
Drain current ID (A)
3