2SK2129 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
View to exact match
2SK2129 Datasheet PDF : 3 Pages
| |||
Power F-MOS FETs
2SK2129
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 20mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 50ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage VDSS
800
V
Gate to Source voltage
VGSS
±30
V
Drain current
DC
ID
Pulse
IDP
±3
A
±6
A
Avalanche energy capacity
EAS*
20
mJ
Allowable power
dissipation
TC = 25°C
PD
Ta = 25°C
50
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
* L = 4.5mH, IL = 3A, VDD = 50V, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
IDR = 3A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 2A
VDD = 200V, RL = 100Ω
9.9±0.3
φ3.2±0.1
unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7 123
1: Gate
2: Drain
3: Source
TO-220E Package
min
typ
max
Unit
0.1
mA
±1
µA
800
V
2
5
V
3.2
4
Ω
1.5
2.4
S
−1.6
V
730
pF
90
pF
40
pF
35
ns
60
ns
50
ns
160
ns
2.5
°C/W
1
|
|
Share Link: 