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K2355 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K2355
NEC
NEC => Renesas Technology NEC
K2355 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
SYMBOL
RDS(on)
MIN.
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS(off)
2.5
| yfs |
1.0
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
TYP.
0.9
1.0
670
140
18
11
8
40
8
20
4.5
9
1.0
270
1.0
MAX.
1.4
1.5
3.5
100
±100
UNIT
m
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = 10 V 2SK2355
ID = 2.5 A 2SK2356
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.5 A
VDS = VDSS, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2.5 A
VGS = 10 V
VDD = 150 V
RG = 10 RL = 60
ID = 5.0 A
VDD = 400 V
VGS = 10 V
IF = 5.0 A, VGS = 0
IF = 5.0 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25
PG
VGS = 20 - 0 V
50
L
VDD
D.U.T.
RG
PG. RG = 10
IAS
ID
VDD
BVDSS
VDS
Starting Tch
VGS
0
t
t = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
Wave
Form
VGS
10 %
0
90 %
VGS (on)
ID
90 %
ID
Wave
Form
10 %
0
td (on)
ID
tr
td (off)
90 %
10 %
tf
ton
toff
Test Circuit 3 Gate Charge
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
 

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