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K1934 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1934 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K1934 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1934
Static Drain to Source on State
Resistance vs. Temperature
5
Pulse Test
4
3
ID= 5 A
2A
2
1A
1
0
–40 0 40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5000
di/dt = 100 A/ µs, VGS = 0
2000 Ta = 25°C
1000
500
200
100
50
0.2 0.5 1 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
1000
20
VGS
800
VDD = 250 V
400 V
16
600 V
600
VDS
12
ID = 8 A
400
8
200
VDD= 250 V
4
400 V
600 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
Pulse Test
VDS = 20 V
10
Tc = 25°C
5
–25°C
75°C
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current ID (A)
10000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
1000
Coss
Crss
100
VGS = 0 V
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
td(off)
200
tf
100
tr
50
td(on)
20
10
5
0.1 0.2
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty 1 %
0.5 1 2
5 10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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