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K1773 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1773 Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1773 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1773
Static Drain to Source on State
Resistance vs. Temperature
10
8 Pulse Test
VGS = 10 V
6
4
ID = 5 A
2
2A 1A
0
–40 0
40
80 120 160
Case Temperature TC (°C)
5000
Body to Drain Diode Reverse
Recovery Time
2000
1000
500
200 di / dt = 100 A / µs
VGS = 0, Ta =25°C
100
50
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
1000
20
800
600 VDS
400
200
0
40
VGS
16
ID = 5 A
VDD = 250 V
400 V
600 V
VDD = 600 V
400 V
250 V
80 120 160
12
8
4
0
200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
10
5
Tc = – 25°C
2
25°C
75°C
1
0.5
0.2
VDS = 10 V
Pulse Test
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
100
VGS = 0
f = 1 MHz
10
0
10
20
Coss
Crss
30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
td (off)
200
tf
100
tr
50
td (on)
20
.
VGS = 10 V, VDD =. 30 V
10 PW = 2 µs, duty 1%
5
0.1 0.2 0.5 1 2
5 10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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