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K1773 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1773 Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1773 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1773
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
10
10 V
8V
5.5 V
8
Pulse Test
6
5V
4
4V
2
VGS = 3.5 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
5A
8
4
2A
ID = 1 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
30 Operation in this area
is limited by RDS(on)
10
100 µs
3
1
0.3
0.1 Ta = 25°C
0.05
10 30 100 300 1000 3000 10000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
4 VDS = 10 V
Pulse Test
3
2
Tc = 75°C
1
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
2
VGS = 10 V
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current ID (A)
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