datasheetbank_Logo     Технический паспорт Поисковая и бесплатно техническое описание Скачать

K2007 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K2007 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K2007 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
4
Pulse Test
3
20 A
2
10 A
1
ID = 5 A
0
4
8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source On State
Resistance vs. Temperature
0.5
0.4
VGS = 10V
Pulse Test
0.3
ID = 20 A
0.2
0.1
5A
10 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
2SK2007
Static Drain to Source On State
Resistance vs. Drain Current
5
2
1
0.5
VGS = 10 V
0.2
0.1
0.05
1
15 V
2
5 10 20 50 100
Drain Current I D (A)
Forward Transfer Admittance
vs. Drain Current
100
–25°C
30
Tc = 25°C
10
3
75°C
1
VDS = 10 V
Pulse Test
0.3
0.1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
5
Direct download click here

 

Share Link : 

All Rights Reserved © datasheetbank.com 2014 - 2019 [ политика конфиденциальности ] [ Запрос Даташит ]