K2007 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
| Номер в каталоге | Компоненты Описание | производитель |
| K2007 | Silicon N-Channel MOS FET |  Hitachi -> Renesas Electronics  |
K2007 Datasheet PDF : 9 Pages
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2SK2007
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
250
V
±30
V
20
A
80
A
20
A
100
W
150
°C
–55 to +150
°C
2
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