datasheetbank_Logo     Технический паспорт Поисковая и бесплатно техническое описание Скачать

K1773 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1773 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1773 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SK1773
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
voltage
V(BR)DSS
1000 —
Gate to source breakdown
voltage
V(BR)GSS
±30
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
2.0
Static drain to source on state RDS(on)
1.5
resistance
Forward transfer admittance |yfs|
3.2 5.0
Max
±10
250
3.0
2.0
Input capacitance
Ciss
Output capacitance
Coss —
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note 1. Pulse Test
1700 —
700 —
315 —
25
110 —
210 —
135 —
0.85 —
1050 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 800 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 3 A
VGS = 10 V*1
ID = 3 A
VDS = 20 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 3 A
VGS = 10 V
RL = 10
IF = 5 A, VGS = 0
IF = 5 A, VGS = 0,
diF / dt = 100 A / µs
3
Direct download click here

 

Share Link : 

All Rights Reserved © datasheetbank.com 2014 - 2020 [ политика конфиденциальности ] [ Запрос Даташит ]