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K1920 Просмотр технического описания (PDF) - SANYO -> Panasonic

Номер в каталогеКомпоненты Описаниепроизводитель
K1920 N-Channel Silicon MOSFET SANYO
SANYO -> Panasonic SANYO
K1920 Datasheet PDF : 4 Pages
1 2 3 4
2SK1920
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Votlage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA, VGS=0
IG=±100µA, VDS=0
VDS=250V, VGS=0
VGS=±25V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=4A, VGS=0
Switching Time Test Circuit
Ratings
Unit
250 V
±30 V
4A
16 A
1.0 W
30 W
150 ˚C
–55 to +150 ˚C
Ratings
Unit
min
typ
max
250
V
±30
V
100 µA
±10 µA
1.5
2.5 V
2.5
4
S
500 700 m
420
pF
95
pF
30
pF
12
ns
15
ns
65
ns
55
ns
1.0
1.5 V
No.4244–2/4
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