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K192A Просмотр технического описания (PDF) - Toshiba

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K192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type Toshiba
Toshiba Toshiba
K192A Datasheet PDF : 6 Pages
1 2 3 4 5 6
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK192A
FM Tuner Applications
VHF Band Amplifier Applications
2SK192A
Unit: mm
· High power gain: GPS = 24dB (typ.) (f = 100 MHz)
· Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
· High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDO
IG
PD
Tj
Tstg
Rating
Unit
-18
V
10
mA
200
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-4E1D
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VGS = -1.0 V, VDS = 0
V (BR) GDO IG = -100 mA
IDSS
(Note)
VGS = 0, VDS = 10 V
VGS (OFF) VDS = 10 V, ID = 1 mA
ïYfsï
VGS = 0, VDS = 10 V, f = 1 kHz
Ciss
Crss
GPS
VDS = 10 V, VGS = 0, f = 1 MHz
VGD = -10 V, f = 1 MHz
VDD = 10 V, f = 100 MHz (Figure 1)
NF
VDD = 10 V, f = 100 MHz (Figure 1)
Note: IDSS classification Y: 3.0~7.0, GR: 6.0~14.0, BL: 12.0~24.0
Min Typ. Max Unit
¾
¾
-10
nA
-18
¾
¾
V
3
¾
24
mA
-1.2 -3
¾
V
¾
7
¾
mS
¾
3.5
¾
pF
¾
¾ 0.65 pF
¾
24
¾
dB
¾
1.8 3.5
dB
1
2003-04-04
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