K184GR View Datasheet(PDF) - Toshiba
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| K184GR Datasheet PDF : 0 Pages | |||
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184
2SK184
Low Noise Audio Amplifier Applications
Unit: mm
• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
−50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
―
2-4E1C
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
Test Condition
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 0.1 μA
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VDG = 10 V, ID = 0, f = 1 MHz
NF (1)
VDS = 10 V, RG = 1 kΩ, ID = 0.5 mA,
f = 10 Hz
NF (2)
VDS = 10 V, RG = 1 kΩ, ID = 0.5 mA,
f = 1 kHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−50 ⎯
⎯
V
1.2
⎯ 14.0 mA
−0.2
⎯
−1.5
V
4.0
15
⎯
mS
⎯
13
⎯
pF
⎯
3
⎯
pF
⎯
5
10
dB
⎯
1
2
1
2007-11-01
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