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K184 Просмотр технического описания (PDF) - Toshiba

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K184 Silicon N Channel Junction Type Field Effect Transistor Toshiba
Toshiba Toshiba
K184 Datasheet PDF : 4 Pages
1 2 3 4
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184
2SK184
Low Noise Audio Amplifier Applications
Unit: mm
High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
High breakdown voltage: VGDS = 50 V
Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
2-4E1C
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
Test Condition
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 0.1 μA
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VDG = 10 V, ID = 0, f = 1 MHz
NF (1)
VDS = 10 V, RG = 1 kΩ, ID = 0.5 mA,
f = 10 Hz
NF (2)
VDS = 10 V, RG = 1 kΩ, ID = 0.5 mA,
f = 1 kHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA
Min Typ. Max Unit
⎯ −1.0 nA
50
V
1.2
14.0 mA
0.2
1.5
V
4.0
15
mS
13
pF
3
pF
5
10
dB
1
2
1
2007-11-01
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