2SK0198R View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
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2SK0198R Datasheet PDF : 3 Pages
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Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
s Features
q High mutual conductance gm
q Low noise type
q Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
VDSX
VGDO
ID
IG
PD
Tch
Tstg
30
V
−30
V
20
mA
10
mA
150
mW
150
°C
−55 to +150
°C
0.40+–00..0150
3
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Unit: mm
0.16+–00..0160
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol (Example): 1O
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current IDSS*
VDS = 10 V, VGS = 0
0.5
12
mA
Gate to Source leakage current IGSS
VGS = −30 V, VDS = 0
−100
nA
Gate to Source cut-off voltage VGSC
VDS = 10 V, ID = 10 µA
− 0.1
−1.5
V
VDS = 10 V, ID = 0.5 mA, f = 1 kHz
Mutual conductance
gm
VDS = 10 V, VGS = 0, f = 1 kHz
4
13
mS
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
VDS = 10 V, VGS = 0, f = 1 MHz
14
pF
3.5
pF
Noise figure
VDS = 30 V, ID = 1 mA, GV = 80 dB
NV
60
mV
Rg = 100 kΩ, Function = FLAT
* IDSS rank classification
Runk
P
IDSS (mA)
Marking Symbol
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Publication date: January 2002
Note) The part number in the parenthesis shows conventional part number.
SJF00006BED
1
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