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2SK1254L-E View Datasheet(PDF) - Renesas Electronics

Part NameDescriptionManufacturer
2SK1254L-E Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
2SK1254L-E Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK1254(L), 2SK1254(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 120
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
|yfs|
2.4
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery trr
time
Note: 3. Pulse test
Typ
0.30
0.35
4.0
420
190
25
5
20
150
45
0.95
160
Ratings
120
±20
3
12
3
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
100
2.0
0.40
0.55
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V *3
ID = 2 A, VGS = 4 V *3
ID = 2 A, VDS = 10 V *3
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 2 A, VGS = 10 V,
RL = 15
IF = 3 A, VGS = 0
IF = 3 A, VGS = 0,
diF/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7
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