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K1169 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1169 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K1169 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1169, 2SK1170
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.8
VGS = 10 V
Pulse Test
0.6
ID = 20 A
0.4
10 A
0.2
5A
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
1,000
500
200
100
50
0.5 1.0 2
5 10 20 50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
VDD = 100 V
400
250 V
16
400 V
300
12
VDS
VGS
200
8
100
V DD = 400 V
ID = 20 A 4
250 V
100 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
20 Pulse Test
10
–25°C
TC = 25°C
75°C
5
2
1.0
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current ID (A)
10,000
Typical Capacitance
vs. Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
1,000
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
td (off)
100
tf
50
tr
td (on)
20
VGS = 10 V
VDD
=
30
V
10 PW = 2 µs, duty < 1%
5
0.5 1.0 2
5 10 20
50
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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