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K1169 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1169 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K1169 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1169, 2SK1170
Main Characteristics
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
50
10 V 7 V
6V
40
Pulse Test
30
20
5V
10
VGS = 4 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6
20 A
4
10 A
2
ID = 5 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1.0
10
OispliemraitetiodnbiDynCRtOhPDpiWSser(aa=otirn1oe)0nam(TsC1(=m11S02s0h5o°µCts))
µs
0.3 Ta = 25°C
2SK1170
2SK1169
0.1
1 3 10 30 100 300
1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 20 V
Pulse Test
16
12
8
4
75°C
–25°C
TC = 25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1.0
0.5
VGS = 10 V
0.2
15 V
0.1
0.05
1
2
5 10 20 50 100
Drain Current ID (A)
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