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K1169 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1169 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K1169 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1169, 2SK1170
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1169
2SK1170
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
450
500
±30
20
80
20
120
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source
breakdown voltage
2SK1169 V(BR)DSS
450
2SK1170
500
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
IGSS
Zero gate voltage drain 2SK1169
IDSS
current
2SK1170
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on 2SK1169 RDS(on)
state resistance
2SK1170
Forward transfer admittance
|yfs|
10
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery trr
time
Note: 3. Pulse test
Typ
0.20
0.22
16
2800
780
90
32
115
200
90
1.0
500
Max
±10
250
3.0
0.25
0.27
(Ta = 25°C)
Unit
Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V *3
S ID = 10 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 10 A, VGS = 10 V,
ns RL = 3
ns
ns
V IF = 20 A, VGS = 0
ns IF = 20 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
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