datasheetbank_Logo     Технический паспорт Поисковая и бесплатно техническое описание Скачать

K1161 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1161 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K1161 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1161, 2SK1162
Main Characteristics
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V 7 V
6V
16
Pulse Test
12
5V
8
4
VGS = 4 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
ID = 2 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
DC OpePrWatio=n1(0Tms1(1m1ssh0o0t)µs
1.0
C = 25°C)
0.3 Ta = 25°C
2SK1162
0.1
13
2SK1161
10 30 100 300
1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
–25°C
16
VDS = 20 V
Pulse Test
TC = 25°C
12
75°C
8
4
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
VGS = 10 V
1.0
0.5
15 V
0.2
0.1
0.05
0.5 1.0 2
5 10 20
50
Drain Current ID (A)
Direct download click here

 

Share Link : 

All Rights Reserved © datasheetbank.com 2014 - 2019 [ политика конфиденциальности ] [ Запрос Даташит ]