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K1155 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1155 Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1155 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1155, 2SK1156
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
10
10 V
6V
Pulse Test
5.5 V
8
6
5.0 V
4
4.5 V
2
VGS = 4 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6
5A
4
2A
2
ID = 1 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
20
10
5
2
1.0
DC
PW
1
Operat=io1n0(Tms
10
100 µs
ms
(1 shot)
µs
0.5
0.2
C = 25°C)
Ta = 25°C
0.1
2SK1156
2SK1155
0.05
1 3 10 30 100 300
1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
–25°C
8
VDS = 20 V
Pulse Test
6
TC = 25°C
75°C
4
2
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
5
VGS = 10 V
2
15 V
1.0
0.5
0.2
0.1
0.5 1.0 2
5 10 20 50
Drain Current ID (A)
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