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K1095 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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K1095 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1095 Datasheet PDF : 3 Pages
1 2 3
2SK1095
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
TO–220FM
2
1
3
12 3
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
25
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
100
A
———————————————————————————————————————————
Body to drain diode reverse drain current IDR
25
A
———————————————————————————————————————————
Channel dissipation
Pch**
30
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW 10 µs, duty cycle 1 %
** Value at TC = 25 °C
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