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K1405 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
K1405
Hitachi
Hitachi -> Renesas Electronics Hitachi
K1405 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SK1405
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 600
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off) 2.0
Static drain to source on state RDS(on)
resistance
Forward transfer admittance |yfs|
9
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note: 1. Pulse test
Typ Max
±10
250
3.0
0.35 0.50
14
3150 —
780 —
110 —
35
120 —
240 —
100 —
1.0
140 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 500 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 V *1
ID = 8 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 8 A, VGS = 10 V,
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0,
diF/dt = 100 A/µs
3
 

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