K1303 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

View to exact match

K1303

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1303

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 100

Gate to source breakdown

voltage

V(BR)GSS ±20

Gate to source leak current

I GSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off) 1.0

Static drain to source on state RDS(on) —

resistance

—

Forward transfer admittance |yfs|

13

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

250 µA

—

2.0

V

0.05 0.06 Ω

0.06 0.09 Ω

22

—

S

1750 —

pF

710 —

pF

180 —

pF

15

—

ns

120 —

ns

390 —

ns

195 —

ns

1.3

—

V

360 —

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 80 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 15 A, VGS = 10 V *1

ID = 15 A, VGS = 4 V *1

ID = 15 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 15 A, VGS = 10 V,

RL = 2 Ω

IF = 30 A, VGS = 0

IF = 30 A, VGS = 0,

diF/dt = 50 A/µs

3

Share Link: