K1299S View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

View to exact match

K1299S

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1299(L), 2SK1299(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 100

Gate to source breakdown

voltage

V(BR)GSS ±20

Gate to source leak current

I GSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off) 1.0

Static Drain to source on state RDS(on) —

resistance

—

Forward transfer admittance |yfs|

2.4

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

100 µA

—

2.0

V

0.25 0.35 Ω

0.30 0.45 Ω

4.0

—

S

400 —

pF

165 —

pF

45

—

pF

5

—

ns

35

—

ns

160 —

ns

60

—

ns

1.0

—

V

135 —

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 80 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A, VGS = 10 V *1

ID = 2 A, VGS = 4 V 1*

ID = 2 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 2 A, VGS = 10 V,

RL = 15 Ω

IF = 3 A, VGS = 0

IF = 3 A, VGS = 0,

diF/dt = 50 A/µs

3

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