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K1161 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1161 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1161 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1161, 2SK1162
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
2SK1161 V(BR)DSS 450
breakdown voltage 2SK1162
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1161 IDSS
drain current
2SK1162
Gate to source cutoff voltage VGS(off) 2.0
Static Drain to source 2SK1161 RDS(on)
on state resistance 2SK1162
Forward transfer admittance |yfs|
4.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward
VDF
voltage
Body to drain diode reverse
t rr
recovery time
Note: 1. Pulse test
Typ Max Unit
V
V
±10 µA
250 µA
3.0
V
0.6
0.8
0.7
0.9
7.0
S
1050 —
pF
280 —
pF
40
pF
15
ns
60
ns
90
ns
45
ns
1.0
V
350 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V *1
ID = 5 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 5 A, VGS = 10 V,
RL = 6
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF/dt = 100 A/µs
See characteristic curves of 2SK1157, 2SK1158.
3
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