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K1109 View Datasheet(PDF) - NEC => Renesas Technology

Part NameDescriptionManufacturer
K1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM NEC
NEC => Renesas Technology NEC
K1109 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK1109
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK1109 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
1600 µS TYP. (IDSS = 200 µA)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
2SK1109
PACKAGE
SC-59 (MM)
PACKAGE DRAWING (Unit: mm)
0.8
1. Source
2. Drain
3. Gate
1
2
3
1.1
2.9 ± 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Note
VDSX
20
V
Gate to Drain Voltage
VGDO
–20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
80
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg –55 to +125 °C
Note VGS = –1.0 V
EQUIVALENT CIRCUIT
Gate
Drain
Source
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15940EJ1V0DS00 (1st edition)
©
Date Published January 2002 NS CP(K)
Printed in Japan
2002
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