JUNCTION FIELD EFFECT TRANSISTOR
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
The 2SK1109 is suitable for converter of ECM.
• Compact package
• High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
1600 µS TYP. (IDSS = 200 µA)
• Includes diode and high resistance at G - S
PACKAGE DRAWING (Unit: mm)
2.9 ± 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Note
Gate to Drain Voltage
Total Power Dissipation
Tstg –55 to +125 °C
Note VGS = –1.0 V
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15940EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan