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K1056 Просмотр технического описания (PDF) - Renesas Electronics

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K1056 Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1056 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1056, 2SK1057, 2SK1058
Main Characteristics
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
10
8
VGS = 10 V
9
TC = 25°C
8
6
7
6
4
5
2
4
Pch
3
=
100
W
2
1
0
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation
Voltage vs. Drain Current
10
VGD = 0
5
2
25°C
75°C
=
–25°C
TC
1.0
0.5
0.2
0.1
0.1 0.2
0.5 1.0 2
5 10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 5
Maximum Safe Operation Area
20
Ta = 25°C
10
5
2
ID
max
(Continuous)
PW =PW1 sP=W11=0s0h1o0mtmss11sshhoott
1.0
0.5
2SK1056 2SK1057
0.2
5 10 20
2SK1058
50 100 200 500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1.0
VDS = 10 V
0.8
0.6
0.4
0.2
0
0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage VGS (V)
Drain to Source Voltage vs.
Gate to Source Voltage
10
8
TC = 25°C
6
5A
4
2
2A
ID = 1 A
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
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