datasheetbank_Logo   Технический паспорт Поисковая и бесплатно техническое описание Скачать
Номер в каталоге  

K1058 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1058 Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1058 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1056, 2SK1057, 2SK1058
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1056
2SK1057
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSX
VGSS
ID
IDR
Pch*1
Tch
Tstg
Item
Symbol Min
Typ
Drain to source
2SK1056 V(BR)DSX
120
breakdown voltage
2SK1057
140
2SK1058
160
Gate to source breakdown voltage
V(BR)GSS
±15
Gate to source cutoff voltage
VGS(off)
0.15
Drain to source saturation voltage
VDS(sat)
Forward transfer admittance
|yfs|
0.7
1.0
Input capacitance
Ciss
600
Output capacitance
Coss
350
Reverse transfer capacitance
Crss
10
Turn-on time
ton
180
Turn-off time
toff
60
Note: 2. Pulse test
Ratings
120
140
160
±15
7
7
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
(Ta = 25°C)
Max
Unit
Test conditions
V ID = 10 mA, VGS = –10 V
1.45
12
1.4
V IG = ±100 µA, VDS = 0
V ID = 100 mA, VDS = 10 V
V
ID = 7 A, VGD = 0 *2
S ID = 3 A, VDS = 10 V *2
pF VGS = –5 V, VDS = 10 V,
pF f = 1 MHz
pF
ns VDD = 20 V, ID = 4 A
ns
Rev.2.00 Sep 07, 2005 page 2 of 5
Direct download click here
 

Share Link : Renesas
All Rights Reserved © datasheetbank.com 2014 - 2019 [ политика конфиденциальности ] [ Запрос Даташит ]