J535-E View Datasheet(PDF) - Renesas Electronics
Part Name
Description
View to exact match
J535-E Datasheet PDF : 8 Pages
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2SJ535
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–50
–10 V
Pulse Test
–8 V
–3.5 V
–40
–5 V
–4 V
–30
–3 V
–20
–10
–2.5 V
VGS = –2 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Pulse Test
–4
–3
–2
ID = –50 A
–1
–20 A
–10 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
–1000
–300
10 µs
–100
–30
–10
–3
–1
DC
Operation in
this area is
OpePraWtio=n1(T0cm1=s1m20(150s°sCµh)sot)
–0.3
limited by RDS (on)
Ta = 25°C
–0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–50
VDS = –10 V
Pulse Test
–40
–30
–20
–10
Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = –4 V
0.02
–10 V
0.01
–1
–3 –10 –30 –100 –300 –1000
Drain Current ID (A)
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