datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

J506 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
J506 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SJ506(L), 2SJ506(S)
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
160 VGS = –4 V
120
ID = –10 A
–5 A
–2 A
80
40
–10 V
–10 A
–2 A, –5 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
–0.1 –0.2
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10 –20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –5 V
–10 V
–10
–25 V
–4
–20
VDS
–30
VDD = –25 V
–8
–10 V
–5 V –12
–40
VGS
ID = –10 A
–50
0
8
16 24 32
Gate Charge Qg (nc)
–16
–20
40
Forward Transfer Admittance vs.
Drain Current
100
50
20
Tc = –25°C
10
5
25°C
2
75°C
1
0.5
–0.1 –0.2 –0.5 –1 –2
VDS = –10 V
Pulse Test
–5 –10 –20 –50
Drain Current ID (A)
5000
2000
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
20
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = –10 V, VDD = –10 V
500 PW = 10 µs, duty 1 %
200
td(off)
100
50
tf
tr
20
td(on)
10
5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 7
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]