datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

J506L View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
J506L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SJ506(L), 2SJ506(S)
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–10 V
–20
–8 V
–6 V
–5 V
Pulse Test
–16
–4.5 V
–4 V
–12
–3.5 V
–8
–3 V
–4
VGS = –2.5 V
0
0
–4 –8 –12 –16 –20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
–0.8
ID = –10 A
–0.4
–5 A
–2 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.5.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
–500
–200
–100
–50
10 µs
–20
–10
–5
–2
–1
–0.5
DC
Operation in
this area is
OPpWera=tio1n0(mTcs1=(11m20s5s0h°oCµts))
limited by RDS (on)
–0.2 Ta = 25°C
–0.1
–0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–20
VDS = –10 V
Pulse Test
–16
–12
–8
–4
75°C
25°C
Tc = –25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
500
200
VGS = –4 V
100
50
–10 V
20
10
–1 –2
Pulse Test
–5 –10 –20 –50 –100
Drain Current ID (A)
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]