J505S View Datasheet(PDF) - Renesas Electronics
Part Name
Description
View to exact match
J505S Datasheet PDF : 9 Pages
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2SJ505(L), 2SJ505(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Ta = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Value
–60
±20
–50
–200
–50
–50
214
75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note: 4. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IDSS
IGSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
–60
±20
—
—
–1.0
—
—
27
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.017
0.024
39
4100
2100
450
32
225
530
330
–1.1
110
Max
—
—
–10
±10
–2.0
0.022
0.036
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = –1 mA, VDS = –10 V
ID = –25 A, VGS = –10 V Note 4
ID = –25 A, VGS = –4 V Note 4
ID = 25 A, VDS = 10 V Note 4
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –10 V
ID = –25 A
RL = 1.2 Ω
IF = –50 A, VGS = 0
IF = –50 A, VGS = 0
diF/dt = 50 A/µs
Rev.5.00 Jun 05, 2006 page 2 of 8
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