2SJ607
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = −60 V, VGS = 0 V
VGS = m 20 V, VDS = 0 V
VDS = −10 V, ID = −1 mA
Forward Transfer Admittance
| yfs | VDS = −10 V, ID = −42 A
Drain to Source On-state Resistance
RDS(on)1 VGS = −10 V, ID = −42 A
RDS(on)2 VGS = −4.0 V, ID = −42 A
Input Capacitance
Ciss
VDS = −10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = −30 V, ID = −42 A
Rise Time
tr
VGS = −10 V
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG
VDD= −48 V
Gate to Source Charge
QGS
VGS = −10 V
Gate to Drain Charge
QGD
ID = −83 A
Body Diode Forward Voltage
VF(S-D) IF = 83 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A/ µs
MIN.
−1.5
45
TYP.
−2.0
90
9.1
11
7500
1800
430
23
16
340
160
188
30
48
1.0
64
150
MAX. UNIT
−10 µA
m 10 µA
−2.5 V
S
11 mΩ
16 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = −20 → 0 V
−
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS (−)
VGS
Wave Form
0 10%
VDS (−)
90%
VGS
VDS
Wave Form
90%
VDS
0
10% 10%
90%
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14655EJ3V0DS