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Description
J668 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
J668
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
Toshiba
J668 Datasheet PDF : 6 Pages
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2
3
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5
6
2SJ668
r
th
−
t
w
10
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
10
μ
100
μ
Single Pulse
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
6.25°C/W
1m
10 m
100 m
1
10
Pulse width t
w
(s)
Safe operating area
−
100
ID max (pulsed)
*
−
10
ID max (continuous)
1 ms
*
DC operation
Tc
=
25°C
100
μ
s
*
−
1
*
: Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
−
0.1
−
0.1
−
1
VDSS max
−
10
Drain-source voltage V
DS
(V)
−
100
E
AS
– T
ch
50
40
30
20
10
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
0V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
= −
25 V, L
=
2.2 mH
Waveform
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2009-07-13
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